(China (Mainland))
Product Summary
The MRF6VP3450HR is a RF Power Field Effect Transistor designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of the MRF6VP3450HR make it ideal for large- signal, common-source amplifier applications in 50 volt analog or digital television transmitter equipment.
Parametrics
MRF6VP3450HR maximum ratings: (1)Drain-Source Voltage, VDSS: -0.5, +110 Vdc; (2)Gate-Source Voltage, VGS: -6.0, +10 Vdc; (3)Storage Temperature Range, Tstg: - 65 to +150 ℃; (4)Case Operating Temperature, TC: 150 ℃; (5)Operating Junction Temperature, TJ: 200 ℃.
Features
MRF6VP3450HR features: (1)Characterized with Series Equivalent Large-Signal Impedance Parameters; (2)Internally Input Matched for Ease of Use; (3)Qualified Up to a Maximum of 50 VDD Operation; (4)Integrated ESD Protection; (5)Excellent Thermal Stability; (6)Designed for Push- Pull Operation; (7)Greater Negative Gate-Source Voltage Range for Improved Class C Operation; (8)RoHS Compliant; (9)In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel. R5 Suffix = 50 Units per 56 mm, 13 inch Reel.
Diagrams
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 MRF6VP3450HR5 |
Freescale Semiconductor |
Transistors RF MOSFET Power VHV6 450W 860MHZ NI1230H |
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MRF6VP3450HR6 |
Freescale Semiconductor |
Transistors RF MOSFET Power VHV6 450W 860MHZ NI1230H |
Data Sheet |
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